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| Part Number | DMJ70H1D3SI3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 700V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13.9nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 351pF @ 50V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3 Ohm @ 2.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251 |
| Package / Case | TO-251-3 Stub Leads, IPak |
Manufacturer: Diodes Incorporated
Description: MOSFET BVDSS: 651V 800V TO251
In Stock: 40
Manufacturer: Diodes Incorporated
Description: MOSFET N-CH 700V 4.6A TO251
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Manufacturer: Diodes Incorporated
Description: MOSFET N-CH TO251
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Manufacturer: Diodes Incorporated
Description: MOSFET BVDSS: 651V 800V TO251
In Stock: 0
Manufacturer: Diodes Incorporated
Description: MOSFET BVDSS: 651V 800V TO251
In Stock: 0
Manufacturer: Diodes Incorporated
Description: MOSFET N-CH 700V 3.9A
In Stock: 5000
