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| Numéro d'article | TPCF8B01(TE85L,F,M |
|---|---|
| État de la pièce | Obsolete |
| FET Type | P-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 20V |
| Courant - Drain continu (Id) @ 25 ° C | 2.7A (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (th) (Max) @ Id | 1.2V @ 200µA |
| Charge de porte (Qg) (Max) @ Vgs | 6nC @ 5V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 470pF @ 10V |
| Vgs (Max) | ±8V |
| FET Caractéristique | Schottky Diode (Isolated) |
| Dissipation de puissance (Max) | 330mW (Ta) |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 1.4A, 4.5V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | VS-8 (2.9x1.5) |
| Paquet / cas | 8-SMD, Flat Lead |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET P-CH 20V 2.7A VS-8
En stock: 0
