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| Numéro d'article | TPCF8201(TE85L,F,M |
|---|---|
| État de la pièce | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Caractéristique | Logic Level Gate |
| Drain à la tension de source (Vdss) | 20V |
| Courant - Drain continu (Id) @ 25 ° C | 3A |
| Rds On (Max) @ Id, Vgs | 49 mOhm @ 1.5A, 4.5V |
| Vgs (th) (Max) @ Id | 1.2V @ 200µA |
| Charge de porte (Qg) (Max) @ Vgs | 7.5nC @ 5V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 590pF @ 10V |
| Puissance - Max | 330mW |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Surface Mount |
| Paquet / cas | 8-SMD, Flat Lead |
| Package de périphérique fournisseur | VS-8 (2.9x1.5) |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET 2N-CH 20V 3A VS-8
En stock: 0
