toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
| Numéro d'article | TPC8211(TE12L,Q,M) |
|---|---|
| État de la pièce | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Caractéristique | Logic Level Gate |
| Drain à la tension de source (Vdss) | 30V |
| Courant - Drain continu (Id) @ 25 ° C | 5.5A |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 3A, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | 25nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 1250pF @ 10V |
| Puissance - Max | 450mW |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Surface Mount |
| Paquet / cas | 8-SOIC (0.173", 4.40mm Width) |
| Package de périphérique fournisseur | 8-SOP (5.5x6.0) |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET 2N-CH 30V 5.5A SOP8
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET 2N-CH 30V 6A SOP8
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET 2N-CH 60V 5A SOP8
En stock: 0
