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| Numéro d'article | TK6A65D(STA4,Q,M) |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 650V |
| Courant - Drain continu (Id) @ 25 ° C | 6A (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 10V |
| Vgs (th) (Max) @ Id | 4V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | 20nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 1050pF @ 25V |
| Vgs (Max) | ±30V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 45W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.11 Ohm @ 3A, 10V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Through Hole |
| Package de périphérique fournisseur | TO-220SIS |
| Paquet / cas | TO-220-3 Full Pack |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 650V 5A TO-220SIS
En stock: 2364
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 650V 5.8A TO-220SIS
En stock: 162
