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| Numéro d'article | TK62N60X,S1F |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 600V |
| Courant - Drain continu (Id) @ 25 ° C | 61.8A (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 10V |
| Vgs (th) (Max) @ Id | 3.5V @ 3.1mA |
| Charge de porte (Qg) (Max) @ Vgs | 135nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 6500pF @ 300V |
| Vgs (Max) | ±30V |
| FET Caractéristique | Super Junction |
| Dissipation de puissance (Max) | 400W (Tc) |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 21A, 10V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Through Hole |
| Package de périphérique fournisseur | TO-247 |
| Paquet / cas | TO-247-3 |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N CH 600V 61.8A TO-3P(N)
En stock: 18
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 600V 61.8A TO-247
En stock: 10
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 600V 61.8A TO-247
En stock: 404
