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| Numéro d'article | TK50P04M1(T6RSS-Q) |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 40V |
| Courant - Drain continu (Id) @ 25 ° C | 50A (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2.3V @ 500µA |
| Charge de porte (Qg) (Max) @ Vgs | 38nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 2600pF @ 10V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 60W (Tc) |
| Rds On (Max) @ Id, Vgs | 8.7 mOhm @ 25A, 10V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | DP |
| Paquet / cas | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 30V 50A DP TO252-3
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 40V 50A DP TO252-3
En stock: 4000
