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| Numéro d'article | TK32E12N1,S1X |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 120V |
| Courant - Drain continu (Id) @ 25 ° C | 60A (Tc) |
| Tension du variateur (Max Rds On, Min Rds On) | 10V |
| Vgs (th) (Max) @ Id | 4V @ 500µA |
| Charge de porte (Qg) (Max) @ Vgs | 34nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 2000pF @ 60V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 98W (Tc) |
| Rds On (Max) @ Id, Vgs | 13.8 mOhm @ 16A, 10V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Through Hole |
| Package de périphérique fournisseur | TO-220 |
| Paquet / cas | TO-220-3 |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N CH 120V 60A TO-220
En stock: 403
