toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
Numéro d'article | TK31N60X,S1F |
---|---|
État de la pièce | Active |
FET Type | N-Channel |
La technologie | MOSFET (Metal Oxide) |
Drain à la tension de source (Vdss) | 600V |
Courant - Drain continu (Id) @ 25 ° C | 30.8A (Ta) |
Tension du variateur (Max Rds On, Min Rds On) | 10V |
Vgs (th) (Max) @ Id | 3.5V @ 1.5mA |
Charge de porte (Qg) (Max) @ Vgs | 65nC @ 10V |
Capacitance d'entrée (Ciss) (Max) @ Vds | 3000pF @ 300V |
Vgs (Max) | ±30V |
FET Caractéristique | Super Junction |
Dissipation de puissance (Max) | 230W (Tc) |
Rds On (Max) @ Id, Vgs | 88 mOhm @ 9.4A, 10V |
Température de fonctionnement | 150°C (TJ) |
Type de montage | Through Hole |
Package de périphérique fournisseur | TO-247 |
Paquet / cas | TO-247-3 |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 600V 30.8A TO-220SIS
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N CH 600V 30.8A TO-220
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 600V 30.8A TO-220
En stock: 95
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N CH 600V 30.8A TO-3P(N)
En stock: 47
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 600V 30.8A TO-3P(N)
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N CH 600V 30.8A TO247
En stock: 95
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 600V 30.8A TO-247
En stock: 240
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 600V 30.8A TO-247
En stock: 294
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N CH 600V 30.8A 5DFN
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N -CH 600V 30.8A DFN
En stock: 2500