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Numéro d'article | TK17A80W,S4X |
---|---|
État de la pièce | Active |
FET Type | N-Channel |
La technologie | MOSFET (Metal Oxide) |
Drain à la tension de source (Vdss) | 800V |
Courant - Drain continu (Id) @ 25 ° C | 17A (Ta) |
Tension du variateur (Max Rds On, Min Rds On) | 10V |
Vgs (th) (Max) @ Id | 4V @ 850µA |
Charge de porte (Qg) (Max) @ Vgs | 32nC @ 10V |
Capacitance d'entrée (Ciss) (Max) @ Vds | 2050pF @ 300V |
Vgs (Max) | ±20V |
FET Caractéristique | - |
Dissipation de puissance (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 290 mOhm @ 8.5A, 10V |
Température de fonctionnement | 150°C |
Type de montage | Through Hole |
Package de périphérique fournisseur | TO-220SIS |
Paquet / cas | TO-220-3 Full Pack |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 800V 17A TO220-3
En stock: 395
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 650V 17.3A TO-220AB
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Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 800V 17A TO220-3
En stock: 400
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 650V 17.3A T0247
En stock: 150