toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
| Numéro d'article | TK13E25D,S1X(S |
|---|---|
| État de la pièce | Active |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 250V |
| Courant - Drain continu (Id) @ 25 ° C | 13A (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 10V |
| Vgs (th) (Max) @ Id | 3.5V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | 25nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 1100pF @ 100V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 102W (Tc) |
| Rds On (Max) @ Id, Vgs | 250 mOhm @ 6.5A, 10V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Through Hole |
| Package de périphérique fournisseur | TO-220-3 |
| Paquet / cas | TO-220-3 |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 250V 13A TO-220AB
En stock: 0
