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Numéro d'article | TK12A60U(Q,M) |
---|---|
État de la pièce | Active |
FET Type | N-Channel |
La technologie | MOSFET (Metal Oxide) |
Drain à la tension de source (Vdss) | 600V |
Courant - Drain continu (Id) @ 25 ° C | 12A (Ta) |
Tension du variateur (Max Rds On, Min Rds On) | 10V |
Vgs (th) (Max) @ Id | 5V @ 1mA |
Charge de porte (Qg) (Max) @ Vgs | 14nC @ 10V |
Capacitance d'entrée (Ciss) (Max) @ Vds | 720pF @ 10V |
Vgs (Max) | ±30V |
FET Caractéristique | - |
Dissipation de puissance (Max) | 35W (Tc) |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 6A, 10V |
Température de fonctionnement | 150°C (TJ) |
Type de montage | Through Hole |
Package de périphérique fournisseur | TO-220SIS |
Paquet / cas | TO-220-3 Full Pack |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 450V 12A TO-220SIS
En stock: 0
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La description: MOSFET N-CH 500V 12A TO-220SIS
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Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 500V TO220SIS
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Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 525V 12A TO-220SIS
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Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 550V 12A TO-220SIS
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Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 600V 12A TO-220SIS
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Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 600V 12A TO220SIS
En stock: 40
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N CH 600V 11.5A TO-220SIS
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Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET N-CH 800V 11.5A TO220-3
En stock: 398