Accueil Indice de produit Produits à semiconducteurs discrets Transistors - FET, MOSFET - Matrices SSM6N57NU,LF

Toshiba Semiconductor and Storage SSM6N57NU,LF

Numéro d'article
SSM6N57NU,LF
Fabricant
Toshiba Semiconductor and Storage
La description
MOSFET 2N-CH 30V 4A UDFN6
Statut sans plomb / statut RoHS
Lead free / RoHS Compliant
Famille
Transistors - FET, MOSFET - Matrices
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

En Stock $ Quantité pcs
  • Prix ​​de référence

    (En dollars américains)
  • 1 pcs

    0.07873/pcs
  • 3,000 pcs

    0.07351/pcs
Total:0.07873/pcs Unit Price:
0.07873/pcs
Prix ​​cible:
Quantité:
Paramètre du produit
Numéro d'article SSM6N57NU,LF
État de la pièce Active
FET Type 2 N-Channel (Dual)
FET Caractéristique Standard
Drain à la tension de source (Vdss) 30V
Courant - Drain continu (Id) @ 25 ° C 4A
Rds On (Max) @ Id, Vgs 46 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id 1V @ 1mA
Charge de porte (Qg) (Max) @ Vgs 4nC @ 4.5V
Capacitance d'entrée (Ciss) (Max) @ Vds 310pF @ 10V
Puissance - Max 1W
Température de fonctionnement 150°C (TJ)
Type de montage Surface Mount
Paquet / cas 6-WDFN Exposed Pad
Package de périphérique fournisseur 6-µDFN(2x2)
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