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| Numéro d'article | SSM6N42FE(TE85L,F) |
|---|---|
| État de la pièce | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Caractéristique | Logic Level Gate |
| Drain à la tension de source (Vdss) | 20V |
| Courant - Drain continu (Id) @ 25 ° C | 800mA |
| Rds On (Max) @ Id, Vgs | 240 mOhm @ 500mA, 4.5V |
| Vgs (th) (Max) @ Id | 1V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | 2nC @ 4.5V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 90pF @ 10V |
| Puissance - Max | 150mW |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Surface Mount |
| Paquet / cas | SOT-563, SOT-666 |
| Package de périphérique fournisseur | ES6 (1.6x1.6) |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET 2N-CH 20V 0.8A ES6
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET 2N-CH 20V 0.5A US6
En stock: 3000
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET 2N-CH 30V 0.1A ES6
En stock: 8000
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET 2N-CH 30V 0.1A 2-2J1C
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET 2N-CH 30V 0.1A
En stock: 0
