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| Numéro d'article | RN1964TE85LF |
|---|---|
| État de la pièce | Active |
| Type de transistor | 2 NPN - Pre-Biased (Dual) |
| Courant - Collecteur (Ic) (Max) | 100mA |
| Tension - Panne d'émetteur collecteur (Max) | 50V |
| Résistance - Base (R1) (Ohms) | 47k |
| Résistance - Base de l'émetteur (R2) (Ohms) | 47k |
| Gain de courant CC (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Courant - Coupure du collecteur (Max) | 100nA (ICBO) |
| Fréquence - Transition | 250MHz |
| Puissance - Max | 200mW |
| Type de montage | Surface Mount |
| Paquet / cas | 6-TSSOP, SC-88, SOT-363 |
| Package de périphérique fournisseur | US6 |
Fabricant: Toshiba Semiconductor and Storage
La description: TRANS 2NPN PREBIAS 0.2W US6
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: TRANS 2NPN PREBIAS 0.1W ES6
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: TRANS 2NPN PREBIAS 0.2W US6
En stock: 3000
Fabricant: Toshiba Semiconductor and Storage
La description: TRANS 2NPN PREBIAS 0.1W ES6
En stock: 4000
Fabricant: Toshiba Semiconductor and Storage
La description: TRANS 2NPN PREBIAS 0.2W US6
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: TRANS 2NPN PREBIAS 0.2W US6
En stock: 0
Fabricant: Toshiba Semiconductor and Storage
La description: TRANS 2NPN PREBIAS 0.2W US6
En stock: 6000
Fabricant: Toshiba Semiconductor and Storage
La description: TRANS 2NPN PREBIAS 0.1W ES6
En stock: 4000
Fabricant: Toshiba Semiconductor and Storage
La description: TRANS 2NPN PREBIAS 0.2W US6
En stock: 0
