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| Numéro d'article | 2SJ360(TE12L,F) |
|---|---|
| État de la pièce | Obsolete |
| FET Type | P-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 60V |
| Courant - Drain continu (Id) @ 25 ° C | 1A (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (th) (Max) @ Id | 2V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | 6.5nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 155pF @ 10V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs | 730 mOhm @ 500mA, 10V |
| Température de fonctionnement | 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | PW-MINI |
| Paquet / cas | TO-243AA |
Fabricant: Toshiba Semiconductor and Storage
La description: MOSFET P-CH 60V 1A SC-62
En stock: 0
