provider of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets.
| Numéro d'article | JANTX1N4961 |
|---|---|
| État de la pièce | Active |
| Tension - Zener (Nom) (Vz) | 13V |
| Tolérance | ±5% |
| Puissance - Max | 5W |
| Impédance (Max) (Zzt) | 3 Ohm |
| Courant - Fuite inverse @ Vr | 10µA @ 9.9V |
| Tension - Avant (Vf) (Max) @ Si | 1.5V @ 1A |
| Température de fonctionnement | -65°C ~ 175°C |
| Type de montage | Through Hole |
| Paquet / cas | E, Axial |
| Package de périphérique fournisseur | - |
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 100V 35A DO5
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 100V 35A DO203AB
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 200V 35A DO5
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 400V 35A DO203AB
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 600V 35A DO5
En stock: 87
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 600V 35A DO5
En stock: 100
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 200V 12A DO203AA
En stock: 39
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 200V 12A DO203AA
En stock: 0
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 400V 12A DO203AA
En stock: 36
Fabricant: Microsemi Corporation
La description: DIODE GEN PURP 400V 12A DO203AA
En stock: 4
