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| Numéro d'article | SPN01N60C3 |
|---|---|
| État de la pièce | Obsolete |
| FET Type | N-Channel |
| La technologie | MOSFET (Metal Oxide) |
| Drain à la tension de source (Vdss) | 650V |
| Courant - Drain continu (Id) @ 25 ° C | 300mA (Ta) |
| Tension du variateur (Max Rds On, Min Rds On) | 10V |
| Vgs (th) (Max) @ Id | 3.7V @ 250µA |
| Charge de porte (Qg) (Max) @ Vgs | 5nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 100pF @ 25V |
| Vgs (Max) | ±20V |
| FET Caractéristique | - |
| Dissipation de puissance (Max) | 1.8W (Ta) |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 500mA, 10V |
| Température de fonctionnement | -55°C ~ 150°C (TJ) |
| Type de montage | Surface Mount |
| Package de périphérique fournisseur | PG-SOT223-4 |
| Paquet / cas | TO-261-4, TO-261AA |
Fabricant: Infineon Technologies
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