genesic is a pioneer and a world leader in silicon carbide technology, while also invested in high power silicon technologies. the global leading manufacturers of industrial and defense systems depend on genesic's technology to elevate the performance and efficiency of their products.
Numéro d'article | GB01SLT12-214 |
---|---|
État de la pièce | Active |
Type de diode | Silicon Carbide Schottky |
Tension - DC Reverse (Vr) (Max) | 1200V |
Courant - Rectifié moyen (Io) | 2.5A |
Tension - Avant (Vf) (Max) @ Si | 1.8V @ 1A |
La vitesse | No Recovery Time > 500mA (Io) |
Temps de récupération inverse (trr) | 0ns |
Courant - Fuite inverse @ Vr | 10µA @ 1200V |
Capacitance @ Vr, F | 69pF @ 1V, 1MHz |
Type de montage | Surface Mount |
Paquet / cas | DO-214AA, SMB |
Package de périphérique fournisseur | SMB (DO-214AA) |
Température de fonctionnement - Jonction | -55°C ~ 175°C |
Fabricant: GeneSiC Semiconductor
La description: DIODE SCHOTTKY 650V 1A DO214AA
En stock: 0
Fabricant: GeneSiC Semiconductor
La description: SIC SCHOTTKY DIODE 1200V 1A
En stock: 0
Fabricant: GeneSiC Semiconductor
La description: DIODE SCHOTTKY 1.2KV 1A TO220AC
En stock: 1853
Fabricant: GeneSiC Semiconductor
La description: DIODE SILICON 1.2KV 1A TO252
En stock: 0