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| Numéro d'article | DMN61D8LVT-13 |
|---|---|
| État de la pièce | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Caractéristique | Logic Level Gate |
| Drain à la tension de source (Vdss) | 60V |
| Courant - Drain continu (Id) @ 25 ° C | 630mA |
| Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 150mA, 5V |
| Vgs (th) (Max) @ Id | 2V @ 1mA |
| Charge de porte (Qg) (Max) @ Vgs | 0.74nC @ 5V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 12.9pF @ 12V |
| Puissance - Max | 820mW |
| Température de fonctionnement | -55°C ~ 150°C (TJ) |
| Type de montage | Surface Mount |
| Paquet / cas | SOT-23-6 Thin, TSOT-23-6 |
| Package de périphérique fournisseur | TSOT-26 |
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La description: MOSFET 2N-CH 60V 0.63A TSOT26
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