diodes incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets.
| Numéro d'article | DMG4511SK4-13 |
|---|---|
| État de la pièce | Active |
| FET Type | N and P-Channel, Common Drain |
| FET Caractéristique | Logic Level Gate |
| Drain à la tension de source (Vdss) | 35V |
| Courant - Drain continu (Id) @ 25 ° C | 5.3A, 5A |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 8A, 10V |
| Vgs (th) (Max) @ Id | 3V @ 250µA |
| Charge de porte (Qg) (Max) @ Vgs | 18.7nC @ 10V |
| Capacitance d'entrée (Ciss) (Max) @ Vds | 850pF @ 25V |
| Puissance - Max | 1.54W |
| Température de fonctionnement | -55°C ~ 150°C (TJ) |
| Type de montage | Surface Mount |
| Paquet / cas | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
| Package de périphérique fournisseur | TO-252-4L |
Fabricant: Diodes Incorporated
La description: MOSFET N/P-CH 35V TO252-4L
En stock: 2500
