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| Numero de parte | PHN210,118 |
|---|---|
| Estado de la pieza | Obsolete |
| Tipo de FET | 2 N-Channel (Dual) |
| Característica FET | Logic Level Gate |
| Drene a la fuente de voltaje (Vdss) | 30V |
| Corriente - Drenaje continuo (Id) a 25 ° C | - |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2.2A, 10V |
| Vgs (th) (Max) @ Id | 2.8V @ 1mA |
| Carga de puerta (Qg) (Max) @ Vgs | 6nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 250pF @ 20V |
| Potencia - Max | 2W |
| Temperatura de funcionamiento | -65°C ~ 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 8-SOIC (0.154", 3.90mm Width) |
| Paquete de dispositivo del proveedor | 8-SO |
Fabricante: Nexperia USA Inc.
Descripción: MOSFET 2N-CH 30V 6.3A SOT96-1
En stock: 0
Fabricante: Nexperia USA Inc.
Descripción: MOSFET 2N-CH 30V 8SOIC
En stock: 2500
