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| Numero de parte | IDK12G65C5XTMA1 |
|---|---|
| Estado de la pieza | Discontinued at Digi-Key |
| Tipo de diodo | Silicon Carbide Schottky |
| Voltaje - DC Reverse (Vr) (Max) | 650V |
| Corriente - promedio rectificado (Io) | 12A (DC) |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.8V @ 12A |
| Velocidad | No Recovery Time > 500mA (Io) |
| Tiempo de recuperación inversa (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 2.1mA @ 650V |
| Capacitancia @ Vr, F | 360pF @ 1V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Paquete de dispositivo del proveedor | PG-TO263-2 |
| Temperatura de funcionamiento - unión | -55°C ~ 175°C |
Fabricante: Infineon Technologies
Descripción: DIODE SCHOTTKY 650V 12A TO263-2
En stock: 0
