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| Numero de parte | C5D50065D |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Silicon Carbide Schottky |
| Voltaje - DC Reverse (Vr) (Max) | 650V |
| Corriente - promedio rectificado (Io) | 100A (DC) |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.8V @ 50A |
| Velocidad | No Recovery Time > 500mA (Io) |
| Tiempo de recuperación inversa (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 500µA @ 650V |
| Capacitancia @ Vr, F | 1970pF @ 0V, 1MHz |
| Tipo de montaje | Through Hole |
| Paquete / caja | TO-247-3 |
| Paquete de dispositivo del proveedor | TO-247-3 |
| Temperatura de funcionamiento - unión | -55°C ~ 175°C |
