Part Number | SI2347DS-T1-GE3 |
---|---|
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 705pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.2W (Ta), 1.7W (Tc) |
Rds On (Max) @ Id, Vgs | 42 mOhm @ 3.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT-23
In Stock: 0
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT-23
In Stock: 0
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 8V 6A SOT-23
In Stock: 9000
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 30V 5.9A SOT-23
In Stock: 15000
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT23-3
In Stock: 15000
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT-23
In Stock: 0
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 30V 5A SOT-23
In Stock: 30000