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| Part Number | SI2305CDS-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 4V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 960mW (Ta), 1.7W (Tc) |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 4.4A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 8V 5.4A SOT23-3
In Stock: 0
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 8V 5.4A SOT23-3
In Stock: 0
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 8V 5.8A SOT23-3
In Stock: 0
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 8V 3.5A SOT23-3
In Stock: 0
