Part Number | STU10NM60N |
---|---|
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 50V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 70W (Tc) |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer: STMicroelectronics
Description: MOSFET N-CH 600V IPAK
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