renesas electronics america designs and manufactures highly integrated semiconductor system solutions for automotive, mobile and pc/av markets.
| Part Number | NP82N04PDG-E1-AY |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 143W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 41A, 10V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer: Renesas Electronics America
Description: MOSFET N-CH 30V 82A TO-263
In Stock: 0
Manufacturer: Renesas Electronics America
Description: MOSFET N-CH 40V 82A TO-262
In Stock: 0
Manufacturer: Renesas Electronics America
Description: MOSFET N-CH 40V 82A TO-263
In Stock: 0
Manufacturer: Renesas Electronics America
Description: MOSFET N-CH 55V 82A TO-263
In Stock: 0
