Home Product Index Discrete Semiconductor Transistors - Bipolar (BJT) - Single, Pre-Biased NSVMUN2212T1G

ON Semiconductor NSVMUN2212T1G

Part Number
NSVMUN2212T1G
Manufacturer
ON Semiconductor
Description
TRANS PREBIAS NPN 230MW SC59-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - Bipolar (BJT) - Single, Pre-Biased
ON Semiconductor

ON Semiconductor

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In Stock 531918 pcs
  • Reference Price

    (In US Dollars)
  • 1 pcs

    0.02526/pcs
  • 12,000 pcs

    0.02526/pcs
Total:0.02526/pcs Unit Price:
0.02526/pcs
Target price:
Quantity:
Product Parameter
Part Number NSVMUN2212T1G
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 230mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59-3
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