Part Number | IPB60R120C7ATMA1 |
---|---|
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 390µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 400V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 92W (Tc) |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 7.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3 |
Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 600V TO263-3
In Stock: 0
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 600V TO263-3
In Stock: 0
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 600V 37.9A TO263
In Stock: 0
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 600V TO263-3
In Stock: 0
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 600V 31A D2PAK
In Stock: 3000
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO263-3
In Stock: 0
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 600V TO263-3
In Stock: 0
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 600V 30A TO263
In Stock: 0
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 600V 25A TO263
In Stock: 0
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 600V 23.8A TO263
In Stock: 0