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| Part Number | IPB027N10N3GATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 275µA |
| Gate Charge (Qg) (Max) @ Vgs | 206nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 14800pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 100A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO263-3
In Stock: 5000
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK-3
In Stock: 0
