epc designs, develops, markets, and sells gallium nitride based power management devices using mature silicon foundries.
| Part Number | EPC2108ENGRT |
|---|---|
| Part Status | Active |
| FET Type | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 60V, 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.22nC @ 5V, 0.044nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 22pF @ 30V, 7pF @ 30V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 9-VFBGA |
| Supplier Device Package | 9-BGA (1.35x1.35) |
Manufacturer: EPC
Description: TRANS GAN 200V 22A BUMPED DIE
In Stock: 0
