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| Artikelnummer | TPC8014(TE12L,Q,M) |
|---|---|
| Teilstatus | Obsolete |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 30V |
| Strom - Dauerablass (Id) @ 25 ° C | 11A (Ta) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA |
| Gate Ladung (Qg) (Max) @ Vgs | 39nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 1860pF @ 10V |
| Vgs (Max) | ±20V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 1W (Ta) |
| Rds Ein (Max) @ Id, Vgs | 14 mOhm @ 5.5A, 10V |
| Betriebstemperatur | 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Lieferantengerätepaket | 8-SOP (5.5x6.0) |
| Paket / Fall | 8-SOIC (0.173", 4.40mm Width) |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET N-CH 200V 1.8A 8-SOP
Auf Lager: 0
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET N-CH 30V 11A SOP8 2-6J1B
Auf Lager: 0
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET N-CH 30V 18A SOP8 2-6J1B
Auf Lager: 0
