Toshiba Semiconductor and Storage RN1965(TE85L,F)

Artikelnummer: RN1965(TE85L,F)
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: TRANS 2NPN PREBIAS 0.2W US6
Bleifreier Status / RoHS-Status: Lead free / RoHS Compliant
Familie: Transistoren - Bipolar (BJT) - Arrays, mit Vorspannung

Toshiba Semiconductor and Storage

toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

Produktparameter

Artikelnummer	RN1965(TE85L,F)
Teilstatus	Active
Transistor-Typ	2 NPN - Pre-Biased (Dual)
Aktuell - Sammler (Ic) (Max)	100mA
Spannung - Kollektor-Emitter-Durchbruch (max.)	50V
Widerstand - Basis (R1) (Ohm)	2.2k
Widerstand - Emitter Basis (R2) (Ohm)	47k
Gleichstromverstärkung (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Sättigung (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Aktuell - Kollektor Cutoff (Max)	100nA (ICBO)
Frequenz - Übergang	250MHz
Leistung max	200mW
Befestigungsart	Surface Mount
Paket / Fall	6-TSSOP, SC-88, SOT-363
Lieferantengerätepaket	US6