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| Artikelnummer | 2SK2845(TE16L1,Q) |
|---|---|
| Teilstatus | Obsolete |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 900V |
| Strom - Dauerablass (Id) @ 25 ° C | 1A (Ta) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 10V |
| Vgs (th) (Max) @ Id | 4V @ 1mA |
| Gate Ladung (Qg) (Max) @ Vgs | 15nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 350pF @ 25V |
| Vgs (Max) | ±30V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 40W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 9 Ohm @ 500mA, 10V |
| Betriebstemperatur | 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Lieferantengerätepaket | DP |
| Paket / Fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET N-CH 900V 1A DP
Auf Lager: 0
Hersteller: Toshiba Semiconductor and Storage
Beschreibung: MOSFET N-CH 900V 8A TO-3PN
Auf Lager: 0
