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| Artikelnummer | STR1P2UH7 |
|---|---|
| Teilstatus | Active |
| FET Typ | P-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 20V |
| Strom - Dauerablass (Id) @ 25 ° C | 1.4A (Ta) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 1.8V, 4.5V |
| Vgs (th) (Max) @ Id | 1V @ 250µA |
| Gate Ladung (Qg) (Max) @ Vgs | 4.8nC @ 4.5V |
| Eingangskapazität (Ciss) (Max) @ Vds | 510pF @ 10V |
| Vgs (Max) | ±8V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 350mW (Tc) |
| Rds Ein (Max) @ Id, Vgs | 100 mOhm @ 700mA, 4.5V |
| Betriebstemperatur | 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Lieferantengerätepaket | SOT-23 |
| Paket / Fall | TO-236-3, SC-59, SOT-23-3 |
