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| Artikelnummer | STI4N62K3 |
|---|---|
| Teilstatus | Active |
| FET Typ | N-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 620V |
| Strom - Dauerablass (Id) @ 25 ° C | 3.8A (Tc) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 10V |
| Vgs (th) (Max) @ Id | 4.5V @ 50µA |
| Gate Ladung (Qg) (Max) @ Vgs | 22nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 550pF @ 50V |
| Vgs (Max) | ±30V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 70W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 2 Ohm @ 1.9A, 10V |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Through Hole |
| Lieferantengerätepaket | I2PAK |
| Paket / Fall | TO-262-3 Long Leads, I²Pak, TO-262AA |
Hersteller: STMicroelectronics
Beschreibung: MOSFET N-CH 620V 8.4A I2PAK
Auf Lager: 950
