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| Artikelnummer | NTTS2P03R2 |
|---|---|
| Teilstatus | Obsolete |
| FET Typ | P-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 30V |
| Strom - Dauerablass (Id) @ 25 ° C | 2.1A (Ta) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 3V @ 250µA |
| Gate Ladung (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| Eingangskapazität (Ciss) (Max) @ Vds | 500pF @ 24V |
| Vgs (Max) | ±20V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 600mW (Ta) |
| Rds Ein (Max) @ Id, Vgs | 85 mOhm @ 2.48A, 10V |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Lieferantengerätepaket | Micro8™ |
| Paket / Fall | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
