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| Artikelnummer | MJD112G |
|---|---|
| Teilstatus | Active |
| Transistor-Typ | NPN - Darlington |
| Aktuell - Sammler (Ic) (Max) | 2A |
| Spannung - Kollektor-Emitter-Durchbruch (max.) | 100V |
| Vce Sättigung (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Aktuell - Kollektor Cutoff (Max) | 20µA |
| Gleichstromverstärkung (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Leistung max | 1.75W |
| Frequenz - Übergang | 25MHz |
| Betriebstemperatur | -65°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Paket / Fall | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Lieferantengerätepaket | DPAK-3 |
