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| Artikelnummer | PMN50XP,165 |
|---|---|
| Teilstatus | Obsolete |
| FET Typ | P-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 20V |
| Strom - Dauerablass (Id) @ 25 ° C | 4.8A (Tc) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 2.5V, 4.5V |
| Vgs (th) (Max) @ Id | 950mV @ 250µA |
| Gate Ladung (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Eingangskapazität (Ciss) (Max) @ Vds | 1020pF @ 20V |
| Vgs (Max) | ±12V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 2.2W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 60 mOhm @ 2.8A, 4.5V |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Lieferantengerätepaket | 6-TSOP |
| Paket / Fall | SC-74, SOT-457 |
Hersteller: Nexperia USA Inc.
Beschreibung: MOSFET P-CH 20V 3.6A 6TSOP
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