genesic is a pioneer and a world leader in silicon carbide technology, while also invested in high power silicon technologies. the global leading manufacturers of industrial and defense systems depend on genesic's technology to elevate the performance and efficiency of their products.
| Artikelnummer | GA03JT12-247 |
|---|---|
| Teilstatus | Active |
| FET Typ | - |
| Technologie | SiC (Silicon Carbide Junction Transistor) |
| Drain auf Source-Spannung (Vdss) | 1200V |
| Strom - Dauerablass (Id) @ 25 ° C | 3A (Tc) (95°C) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | - |
| Vgs (th) (Max) @ Id | - |
| Gate Ladung (Qg) (Max) @ Vgs | - |
| Eingangskapazität (Ciss) (Max) @ Vds | - |
| Vgs (Max) | - |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 15W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 460 mOhm @ 3A |
| Betriebstemperatur | 175°C (TJ) |
| Befestigungsart | Through Hole |
| Lieferantengerätepaket | TO-247AB |
| Paket / Fall | TO-247-3 |
Hersteller: GeneSiC Semiconductor
Beschreibung: BOARD GATE DRIVER
Auf Lager: 0
Hersteller: GeneSiC Semiconductor
Beschreibung: TRANS SJT 1200V 3A TO-247AB
Auf Lager: 146
