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| Artikelnummer | FQP2P40_F080 |
|---|---|
| Teilstatus | Active |
| FET Typ | P-Channel |
| Technologie | MOSFET (Metal Oxide) |
| Drain auf Source-Spannung (Vdss) | 400V |
| Strom - Dauerablass (Id) @ 25 ° C | 2A (Tc) |
| Antriebsspannung (Max. Rds Ein, Min Rds Ein) | 10V |
| Vgs (th) (Max) @ Id | 5V @ 250µA |
| Gate Ladung (Qg) (Max) @ Vgs | 13nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 350pF @ 25V |
| Vgs (Max) | ±30V |
| FET-Eigenschaft | - |
| Verlustleistung (Max) | 63W (Tc) |
| Rds Ein (Max) @ Id, Vgs | 6.5 Ohm @ 1A, 10V |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Through Hole |
| Lieferantengerätepaket | TO-220AB |
| Paket / Fall | TO-220-3 |
Hersteller: Fairchild/ON Semiconductor
Beschreibung: MOSFET N-CH 60V 20A TO-220
Auf Lager: 0
