diodes incorporated is a leading global manufacturer and supplier of high-quality application specific standard products within the broad discrete and analog semiconductor markets.
| Artikelnummer | DMHC6070LSD-13 |
|---|---|
| Teilstatus | Active |
| FET Typ | 2 N and 2 P-Channel (H-Bridge) |
| FET-Eigenschaft | Standard |
| Drain auf Source-Spannung (Vdss) | 60V |
| Strom - Dauerablass (Id) @ 25 ° C | 3.1A, 2.4A |
| Rds Ein (Max) @ Id, Vgs | 100 mOhm @ 1A, 10V |
| Vgs (th) (Max) @ Id | 3V @ 250µA |
| Gate Ladung (Qg) (Max) @ Vgs | 11.5nC @ 10V |
| Eingangskapazität (Ciss) (Max) @ Vds | 731pF @ 20V |
| Leistung max | 1.6W |
| Betriebstemperatur | -55°C ~ 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Paket / Fall | 8-SOIC (0.154", 3.90mm Width) |
| Lieferantengerätepaket | 8-SO |
Hersteller: Diodes Incorporated
Beschreibung: MOSFET 2N/2P-CHA 60V 3.1A 8SO
Auf Lager: 25000
