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| Part Number | SQ2362ES-T1_GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Tc) |
| Rds On (Max) @ Id, Vgs | 95 mOhm @ 4.5A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 60V 4.4A TO236
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Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 60V 2.5A SSOT23
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Manufacturer: Vishay Siliconix
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Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 60V 4.4A TO236
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