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| Part Number | SIS412DN-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 15.6W (Tc) |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 7.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK 1212-8
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Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 30V 20A 1212-8 PPAK
In Stock: 0
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 20V 35A 1212-8
In Stock: 0
