Part Number | SIA466EDJ-T1-GE3 |
---|---|
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 1V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 3.5W (Ta), 19.2W (Tc) |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 9A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SC-70-6 Single |
Package / Case | PowerPAK® SC-70-6 |
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 20V 25A SC-70-6
In Stock: 9000