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| Part Number | SI8483DB-T2-E1 |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1840pF @ 6V |
| Vgs (Max) | ±10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.77W (Ta), 13W (Tc) |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 1.5A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-Micro Foot™ |
| Package / Case | 6-UFBGA |
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