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| Part Number | SI3458BDV-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.3W (Tc) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 3.2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6-TSOP
In Stock: 3000
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6-TSOP
In Stock: 9000
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 60V 3.2A 6-TSOP
In Stock: 0
