Part Number | SI3421DV-T1-GE3 |
---|---|
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 69nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2580pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta), 4.2W (Tc) |
Rds On (Max) @ Id, Vgs | 19.2 mOhm @ 7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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