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| Part Number | SI2342DS-T1-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.2V, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1070pF @ 4V |
| Vgs (Max) | ±5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 2.5W (Tc) |
| Rds On (Max) @ Id, Vgs | 17 mOhm @ 7.2A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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